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  BDX53BFP silicon power darlington transistor applications: n general purpose switching and amplifier n linear and switching industrial equipment n fully insulated package (u.l. compliant) for easy mounting description the BDX53BFP is a silicon epitaxial-base npn power transistor in monolithic darlington configuration mounted in t0-220fp fully molded isolated package. it is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. internal schematic diagram february 2003 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 80 v v ceo collector-emitter voltage (i b = 0) 80 v v ebo emitter-base voltage (i c = 0) 5 v i c collector current 8 a i cm collector peak current (repetitive) 12 a i b base current 0.2 a p tot total dissipation at t c 25 o c 29 w v isol insulation withstand voltage (rms) from all three leads to external heatsink 1500 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 t0-220fp r 1 typ. = 10 k w r 2 typ. = 150 w ? 1/4
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 4.3 70 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 80 v 0.2 ma i ceo collector cut-off current (i b = 0) v ce = 40 v 0.5 ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 2ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 100 ma 80 v v ce(sat) * collector-emitter saturation voltage i c = 3 a i b =12 ma 2 v v be(sat) * base-emitter saturation voltage i c = 3 a i b =12 ma 2.5 v h fe * dc current gain i c = 3 a v ce = 3 v 750 v f * parallel diode forward voltage i f = 3 a i f = 8 a 1.8 2.5 2.5 v v * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area BDX53BFP 2/4
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data BDX53BFP 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2003 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BDX53BFP 4/4


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